Interface for metal gate integration
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJinn-Kwei Liang, Chung-Ren Sun, Shiu-Ko Jang Jiang, Hsiang-Hsiang Ko
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Abstract
A metal oxide semiconductor field effect transistor (MOSFET) includes a semiconductor substrate and an interlayer dielectric (ILD) over the semiconductor substrate. A gate structure is formed within the ILD and disposed on the semiconductor substrate, wherein the gate structure includes a high-k dielectric material layer and a metal gate stack. One or more portions of a protection layer are formed over the gate stack, and a contact etch stop layer is formed over the ILD and over the one or more portions of the protection layer. The metal gate stack includes aluminum and the protection layer includes aluminum oxide.
Claims15
A method of forming a semiconductor structure, comprising:
- forming a metal gate stack over a substrate;
- forming a protection layer over the metal gate stack;
- depositing an etch stop layer over the protection layer;
- depositing an interlayer dielectric over the etch stop layer;
- and
- forming a contact through the interlayer dielectric, through the etch stop layer, through the protection layer, and to the metal gate stack.
A method of making a metal oxide semiconductor field effect transistor, comprising:
- forming a high-k dielectric over a substrate;
- forming a polysilicon gate over the high-k dielectric;
- depositing a first interlayer dielectric (ILD1) over the substrate and around the polysilicon gate;
- after depositing the ILD1, removing the polysilicon gate to leave a gate trench;
- forming a metal gate stack in the gate trench, the metal gate stack including a plurality of metal layers;
- planarizing the ILD1 and the metal gate stack;
- forming a protection layer over the planarized metal gate stack;
- and
- forming an etch stop layer over the ILD1 and the protection layer.
Dependencies are inferred from the claim text.