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US 2014/0273382 A1Published application
Methods of fabricating semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJinho DO, Hajin LIM, WeonHong KIM, Kyungil HONG, Moonkyun SONG
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Abstract
A substrate including an NMOS transistor region and a PMOS transistor region is prepared. A silicon-germanium layer is formed on the PMOS transistor region. Nitrogen atoms are injected in an upper portion of the silicon-germanium layer. A first gate dielectric layer is formed on the NMOS transistor region and the PMOS transistor region. The nitrogen atoms are injected into the upper portion of the silicon-germanium layer before forming the first gate dielectric layer.
Claims6
-11. (canceled)
A method of fabricating a semiconductor device, the method comprising:
- preparing a substrate including a first region and a second region;
- forming a silicon-germanium layer on the first region and the second region;
- forming a nitrogen impurity region in an upper portion of the silicon-germanium layer;
- forming a first gate dielectric layer on the nitrogen impurity region;
- removing the first gate dielectric layer in the second region;
- and
- forming a second gate dielectric layer on the first region and the second region.
4 more elements
-20. (canceled)
Dependencies are inferred from the claim text.