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US 2014/0273369 A1Published application
Methods of forming contacts to source/drain regions of finfet devices
AssigneeGlobalfoundries Inc.
InventorsAndy C. Wei, Shao Ming Koh
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Abstract
In one example, the method disclosed herein includes forming at least one fin for a FinFET device in a semiconducting substrate, performing at least one process operation to form a region in the at least one fin that contains a metal diffusion inhibiting material, depositing a layer of metal on the region in the at least one fin and forming a metal silicide region on the at least one fin.
Claims24
A method, comprising:
- forming at least one fin for a FinFET device in a semiconducting substrate;
- performing at least one process operation to form a region in said at least one fin that contains a metal diffusion inhibiting material;
- depositing a layer of metal on said region in said at least one fin;
- and
- forming a metal silicide region on said at least one fin.
2 more elements
A method, comprising:
- forming a shared gate structure above at least one first fin for a first type of FinFET device and above at least one second fin for a second type of FinFET device, said second type being opposite to said first type;
- performing at least one process operation to form a first region in said at least one first fin and a second region in said at least one second fin, wherein said first and second regions contain a metal diffusion inhibiting material;
- depositing a layer of metal on said first and second regions;
- and
- forming metal silicide regions on said at least one first fin and on said at least one second fin.
2 more elements
Dependencies are inferred from the claim text.