Method of manufacturing semiconductor devices
AssigneeUnited Microelectronics Corp.
InventorsYu-Hsiang Hung, Chung-Fu Chang, Chia-Jong Liu, Yen-Liang Wu, Pei-Yu Chou, Home-Been Cheng
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Abstract
A method of manufacturing a semiconductor device including the steps of providing a substrate having first type semiconductor regions and second type semiconductor regions, forming a conformal first epitaxy mask layer on the substrate, forming first type epitaxial layer in the substrate of the first type semiconductor regions, forming a conformal second epitaxy mask layer on the substrate, forming second type epitaxial layer in the substrate of the second type semiconductor regions, and removing the second epitaxy mask layer.
Claims16
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a substrate having first type semiconductor regions and second type semiconductor regions, wherein said first type semiconductor region and said second type semiconductor region are provided respectively with at least one gate structure;
- forming a first epitaxy mask layer conformally on said gate structures and said substrate;
- removing a part of said first epitaxy mask layer on said first type semiconductor region and forming a first type epitaxial layer in said substrate at both sides of each said gate structure in said first type semiconductor region;
- forming a second epitaxy mask layer conformally on said gate structures, said first type epitaxy layers and said substrate, wherein said second epitaxy mask layer covers on said first epitaxy mask layer on said second type semiconductor regions;
- forming a second type epitaxial layer in said substrate at both sides of each said gate structure in said second type semiconductor region;
- and
- removing said second epitaxy mask layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a substrate including strained silicon device regions and non-strained silicon device regions, wherein said strained silicon device regions and non-strained silicon device regions are provided respectively with at least one gate structure;
- forming an epitaxy mask layer conformally on said gate structures and said substrate;
- and
- removing a part of said epitaxy mask layer on said strained silicon device regions and forming an epitaxial layer in said substrate at both sides of each said gate structure in said strained silicon device regions.
Dependencies are inferred from the claim text.