Semiconductor Devices and Methods of Manufacture Thereof

A method of manufacturing a semiconductor device, the method comprising:

• providing a workpiece including an n-type field effect transistor (N-FET) region, a p-type FET (P-FET) region, and an insulating material disposed over the N-FET region and the P-FET region;
• patterning the insulating material to expose a source or drain region of the N-FET region and a source or drain region of the P-FET region;
• forming a layer of TiO2 over the exposed source or drain region of the N-FET region and the exposed source or drain region of the P-FET region;
• removing a portion of the layer of TiO2 from over the exposed portion of the P-FET region;
• forming a metal layer over a portion of the patterned insulating material, the N-FET region and the P-FET region;
• and
• annealing the workpiece to form a metal-insulator-semiconductor (MIS) tunnel diode over the source or drain region of the N-FET region and a silicide or germinide material over the source or drain region of the P-FET region.