Methods of forming contacts to source/drain regions of finfet devices by forming a region that includes a schottky barrier lowering material

A method, comprising:

• forming a shared gate structure above at least one first fin for an N-type FinFET device and above at least one second fin for a P-type FinFET device;
• forming a patterned mask layer that covers said at least one second fin and leaves exposed said at least one first fin;
• performing at least one process operation through said patterned mask layer to form a region in said at least one first fin that contains a Schottky barrier lowering material;
• removing said patterned mask layer;
• depositing a layer of a valence band metal on said region in said at least one first fin and on said at least one second fin;
• and
• forming metal silicide regions on said at least one first fin and said at least one second fin, wherein said metal silicide regions are comprised of said valance band metal.

A method, comprising:

• forming at least one fin for a P-type FinFET device in a semiconducting substrate;
• performing at least one process operation to form a region in said at least one fin that contains a Schottky barrier lowering material;
• depositing a layer of a conduction band metal on said region;
• and
• forming a metal silicide region on said at least one fin, wherein said metal silicide is comprised of said conduction band metal.

A method, comprising:

• forming a shared gate structure above at least one first fin for a P-type FinFET device and above at least one second fin for an N-type FinFET device;
• forming a patterned mask layer that covers said at least one second fin and leaves exposed said at least one first fin;
• performing at least one process operation through said patterned mask layer to form a region in said at least one first fin that contains a Schottky barrier lowering material;
• removing said patterned mask layer;
• depositing a layer of a conduction band metal on said region in said at least one first fin and on said at least one second fin;
• and
• forming metal silicide regions on said at least one first fin and said at least one second fin, wherein said metal silicide regions are comprised of said conduction band metal.