Method of depositing the metal barrier layer comprising silicon dioxide
AssigneeShanghai Huali Microelectronics Corporation
InventorsGuoFang XUAN, Fei Luo
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Abstract
The present invention discloses to a method of depositing the metal barrier layer comprising silicon dioxide. It is applied in the transistor device comprising a silicon substrate, a gate and a gate side wall. The method comprises the following steps: ions are implanted into the silicon substrate to form an active region in the said silicon substrate; a first dense silicon dioxide film is deposited; a second normal silicon dioxide film is deposited; the said transistor device is high temperature annealed. The present invention ensures that the implanted ion is not separated out of the substrate during the annealing. And it prevents the warping and fragment of the silicon surface.
Claims10
A method of depositing the metal barrier layer comprising silicon dioxide, which is applied in a silicon substrate, a gate is disposed at the upper surface of the said silicon substrate, wherein the method comprises the following steps:
- ions are implanted into the silicon substrate to form an active region in the said silicon substrate;
- a first silicon dioxide film is deposited to cover the exposed upper surface of the said silicon substrate and the said gate;
- a second silicon dioxide film is deposited to cover the upper surface of the first silicon dioxide film;
- a high temperature annealing process is continuously performed;
- wherein, the depositing rate of the said first silicon dioxide film is lower than that of the said second silicon dioxide film.
Dependencies are inferred from the claim text.