US 2014/0273362 A1 · METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND ARRAY SUBSTRATE

Abstract

The embodiments of the present invention provide a method for manufacturing a thin film transistor and a method for manufacturing an array substrate. The method for manufacturing the thin film transistor comprises: forming a gate electrode on a transparent substrate; forming a gate insulation layer; forming a transparent semiconductor film and patterning the transparent semiconductor film to form a semiconductor layer with photoresist being remained over the semiconductor layer; from a side of the transparent substrate opposite to the side on which the gate electrode is formed, exposing and developing the remained photoresist by using the gate electrode as a mask to form a channel position photoresist part corresponding to the gate electrode; forming a source/drain metal film and lifting off the channel position photoresist part and the source/drain metal film located over the channel position photoresist part; and patterning the remained source/drain metal film to form a source electrode and a drain electrode. The embodiments of the present invention are suitable to manufacture the product or device containing thin film transistors.

Claims10

Dependent claims

A method for manufacturing a thin film transistor comprises:

forming a gate electrode on a transparent substrate;
forming a gate insulation layer;
forming a transparent semiconductor film and patterning the transparent semiconductor film to form a semiconductor layer with photoresist being remained over the semiconductor layer;
from a side of the transparent substrate opposite to the side on which the gate electrode is formed, exposing and developing the remained photoresist by using the gate electrode as a mask to form a channel position photoresist part corresponding to the gate electrode;
forming a source/drain metal film and lifting off the channel position photoresist part and the source/drain metal film located over the channel position photoresist part;
and
patterning the remained source/drain metal film to form a source electrode and a drain electrode.

4 more elements

A method for manufacturing an array substrate comprises:

forming a gate metal layer on a transparent substrate, the gate metal layer comprising a gate line and a gate electrode of a thin film transistor;
forming a gate insulation layer;
forming a transparent semiconductor film and patterning the semiconductor film to form a semiconductor layer with photoresist being remained over the semiconductor layer;
from a side of the transparent substrate opposite to the side on which the gate electrode is formed, exposing and developing the remained photoresist with the gate electrode as a mask, to form a channel position photoresist part corresponding to the gate electrode;
forming a source/drain metal film and lifting off the channel position photoresist part and the source/drain metal film thereon;
and
patterning the remained source/drain metal film to form a source/drain metal layer, wherein the source/drain metal layer comprises a source electrode and a drain electrode of the thin film transistor and a data line.

4 more elements

Dependencies are inferred from the claim text.

Method for manufacturing thin film transistor and array substrate

Life of this patent

Method for manufacturing thin film transistor and array substrate

Life of this patent

Abstract

Claims10