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US 2014/0273356 A1Published application
Semiconductor devices and methods of making the same
AssigneeSemiconductor Components Industries, LLC
InventorDarrell Truhitte
Life of this patent
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Abstract
In one embodiment, methods for making semiconductor devices are disclosed.
Claims20
A method for making a semiconductor device, the method comprising:
- forming two or more first metal electrode pads on a conductive metal substrate;
- forming two or more second metal output electrode pads on the conductive metal substrate;
- forming a first dielectric layer on exposed regions of the conductive metals substrate between each of the first metal electrode pads and second metal electrode pads;
- forming two or more first inductive coils on the first dielectric layer, wherein each of the first inductive coils is electrically coupled to one of the first metal electrode pads;
- forming a second dielectric layer on the first inductive coils;
- forming two or more second inductive metal coils on the second dielectric layer, wherein each of the second inductive metal coils is electrically coupled to one of the second metal electrode pads;
- forming a third dielectric layer on the second inductive metal coils;
- forming two or more third metal electrode pads on the third dielectric layer, wherein each of the third contact pads are electrically coupled to one of the second inductive metal coils;
- electrically coupling one or more semiconductor dies to the third metal electrode pads;
- at least partially encapsulating the first dielectric layer, the second dielectric layer, the third dielectric layer, and the semiconductor dies in a molding material;
- and
- removing the conductive metal substrate to expose the first metal electrode pads and the second metal electrode pads.
9 more elements
A method for making a semiconductor device, the method comprising:
- forming two or more metal electrode pads on a conductive metal substrate;
- forming a first dielectric layer on exposed regions of the conductive metals substrate between the metal electrode pads;
- forming two or more first conductive metal lines on the first dielectric layer, wherein each of the first conductive metal lines is electrically coupled to at least one of the metal electrode pads;
- forming two or more metal contact pads on the first dielectric layer, wherein each of the contact pads is electrically coupled to at least one of the metal electrodes pads via one or more of the first conductive metal lines;
- electrically coupling one or more semiconductor dies to the two or more contact pads, wherein the semiconductor dies are electrically coupled to the metal electrode pads;
- at least partially encapsulating the first dielectric layer and the semiconductor dies in a molding material;
- and
- removing the conductive metal substrate to expose the metal electrode pads.
5 more elements
A method of making a semiconductor device, the method comprising:
- forming two or more metal electrode pads on a conductive metal substrate;
- forming a first dielectric layer on exposed regions of the conductive metals substrate between the metal electrode pads;
- forming a one or more additional dielectric layers on the first dielectric layer;
- forming two or more contact pads on the additional dielectric layers, wherein each of the contact pads is electrically coupled to one of the metal electrode pads;
- electrically coupling one or more semiconductor dies to the contact pads;
- at least partially encapsulating the first dielectric layer, the additional dielectric layers, and the semiconductor dies in a molding material;
- removing the conductive metal substrate to expose the metal electrode pads;
- and
- singulating the semiconductor device from an array of identical semiconductor devices.
6 more elements
Dependencies are inferred from the claim text.