Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• (a) providing a wiring substrate including a terminal formed over a first surface of the wiring substrate;
• (b) after the step (a), mounting a semiconductor chip over the first surface of the wiring substrate such that a back surface of the semiconductor chip faces the first surface of the wiring substrate, and such that the semiconductor chip is located in an area spaced apart from the terminal, wherein
• the semiconductor chip has a main surface, an electrode pad formed over the main surface, and the back surface opposite to the main surface, and
• a surface of the electrode pad having a recess;
• (c) after the step (b), electrically connecting the electrode pad of the semiconductor chip with the terminal of the wiring substrate via a wire, wherein
• the wire is comprised of copper, and
• the wire has a wide width part having a diameter greater than that of the other part of the wire;
• wherein the step (c) has following steps (c1)-(c2),
• (c1) electrically connecting the wide width part of the wire with the electrode pad of the semiconductor chip via a bump covering the recess formed on the surface of the electrode pad such that the wide width part of the wire overlaps the recess;
• and
• (c2) after the step (c1), electrically connecting the other part of the wire with the terminal of the wiring substrate, and
• wherein the bump is comprised a metal material having hardness lower than that of copper.