Methods for Forming Back-Channel-Etch Devices with Copper-Based Electrodes
AssigneeIntermolecular, Inc.
InventorsJeroen Van Duren, Sang Lee, Zhi-Wen Sun
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Abstract
Embodiments described herein provide methods for forming indium-gallium-zinc oxide (IGZO) devices. A substrate is provided. An IGZO layer is formed above the substrate. A copper-containing layer is formed above the IGZO layer. A wet etch process is performed on the copper-containing layer to form a source region and a drain region above the IGZO layer. The performing of the wet etch process on the copper-containing layer includes exposing the copper-containing layer to an etching solution including a peroxide compound and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof.
Claims20
A method for forming an indium-gallium-zinc oxide (IGZO) device, the method comprising:
- providing a substrate;
- forming an IGZO layer above the substrate;
- forming a copper-containing layer above the IGZO layer;
- and
- performing a wet etch process on the copper-containing layer to form copper-containing regions above the IGZO layer, wherein the performing the wet etch process on the copper-containing layer comprises exposing the copper-containing layer to an etching solution comprising a peroxide compound and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof.
A method for forming an indium-gallium-zinc oxide (IGZO) device, the method comprising:
- providing a transparent substrate;
- forming a gate electrode above the transparent substrate;
- forming an IGZO layer above the gate electrode;
- forming a copper-containing layer above the IGZO layer;
- and
- performing a wet etch process on the copper-containing layer to form a source region and a drain region above the IGZO layer, wherein the performing the wet etch process on the copper-containing layer comprises exposing the copper-containing layer to an etching solution comprising a peroxide compound and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof.
A method for forming an indium-gallium-zinc oxide (IGZO) device, the method comprising:
- providing a transparent substrate;
- forming a gate electrode above the transparent substrate, wherein the gate electrode comprises one of copper, silver, aluminum, manganese, molybdenum, or a combination thereof;
- forming a gate dielectric layer above the gate electrode;
- forming an IGZO layer above the gate dielectric layer;
- forming a copper-containing layer above the IGZO layer;
- and
- performing a wet etch process on the copper-containing layer to form a source region and a drain region above the IGZO layer, wherein the performing the wet etch process on the copper-containing layer comprises exposing the copper-containing layer to an etching solution comprising hydrogen peroxide and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof.
Dependencies are inferred from the claim text.