High Productivity Combinatorial Screening for Stable Metal Oxide TFTs

A method for forming a plurality of thin film transistors on a substrate in a combinatorial manner, the method comprising:

• providing the substrate, wherein the substrate comprises a plurality of site-isolated regions;
• depositing a gate electrode layer above each of the site-isolated regions;
• patterning each of the gate electrode layers;
• depositing a gate dielectric layer above each gate electrode layer;
• patterning the gate dielectric layer deposited above each gate electrode layer;
• depositing a metal-based semiconductor material layer above each gate dielectric layer;
• patterning the metal-based semiconductor material layer deposited above each gate dielectric layer;
• depositing an etch stop layer above each metal-based semiconductor material layer;
• patterning the etch stop layer deposited above each metal-based semiconductor material layer;
• depositing a source/drain layer above each etch stop layer;
• patterning the source/drain layer deposited above each etch stop layer;
• depositing a passivation layer above each source/drain layer;
• and
• patterning the passivation layer deposited above each source/drain layer;
• wherein at least one of depositing the gate electrode layer, patterning the gate electrode layer, depositing the gate dielectric layer, patterning the gate dielectric layer, depositing the metal-based semiconductor material layer, patterning the metal-based semiconductor material layer, depositing the etch stop layer, patterning the etch stop layer, depositing the source/drain layer, patterning the source/drain layer, depositing the passivation layer, or patterning the passivation layer is varied in a combinatorial manner between at least two of the plurality of site-isolated regions.