Method of Forming Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 Nanoparticles
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsColin C. Baker, Woohong Kim, Shyam S. Bayya, Jasbinder S. Sanghera, Ishwar D. Aggarwal
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Abstract
A method for synthesizing Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 nanopowders using flame spray pyrolysis to form solar cell absorber materials. The flame spray product is the oxide nanoparticles of the absorber materials (copper indium gallium oxide). The oxide nanoparticles may be deposited directly onto glass substrates. The oxide nanoparticles are then sulfurdized or selenized with a post deposition anneal directly on the substrate to form the absorber layer for a solar cell device.
Claims12
A method of forming Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 nanoparticles, comprising:
- performing flame spray pyrolysis on precursor materials to form copper indium gallium oxide, wherein the precursor materials comprise a copper precursor, an indium precursor, and a gallium precursor;
- and
- sulfurdizing or selenizing the copper indium gallium oxide by heating the copper indium gallium oxide in H2S or H2Se gas.
Cu(InxGa1-x)S2 or Cu(InxGa1-x)Se2 nanoparticles made by the method comprising:
- performing flame spray pyrolysis on precursor materials to form copper indium gallium oxide, wherein the precursor materials comprise a copper precursor, an indium precursor, and a gallium precursor;
- and
- sulfurdizing or selenizing the copper indium gallium oxide by heating the copper indium gallium oxide in H2S or H2Se gas.
A method of forming a solar cell absorber layer, comprising:
- performing flame spray pyrolysis on precursor materials comprising Cu(NO3)2.xH2O, Ga(NO3)3.xH2O, and In(NO3)3.xH2O to form copper indium gallium oxide;
- depositing the copper indium gallium oxide onto a substrate;
- and
- sulfurdizing or selenizing the deposited copper indium gallium oxide by heating the copper indium gallium oxide in H2S or H2Se gas.
Dependencies are inferred from the claim text.