Methods for fabricating ZnOSe alloys
AssigneeIntermolecular, Inc.
InventorsHaifan Liang, Jeroen Van Duren
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Abstract
Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to form a metal-oxygen-chalcogen alloy. In some embodiments, the metal oxide film includes zinc oxide and the chalcogen includes selenium.
Claims17
A method of forming a thin-film solar cell absorber layer, the method comprising:
- forming a first layer above a substrate, wherein the first layer comprises a metal oxide;
- and
- heating the first layer in the presence of a chalcogen.
A method of forming a thin-film solar cell absorber layer, the method comprising:
- forming a first layer above a substrate, wherein the first layer comprises a metal oxide;
- forming a second layer on the first layer, wherein the second layer comprises an elemental chalcogen;
- heating the first layer and the second layer.
Dependencies are inferred from the claim text.