Method of forming single side textured semiconductor workpieces
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsVikram M. Bhosle, Christopher E. Dube, Deepak A. Ramappa
Life of this patent
Estimating the term…
Abstract
Methods of creating a workpiece having a smooth side and a textured side are disclosed. In some embodiments, a first side of a workpiece is doped, using ion implantation or diffusion, to create a doped layer. This doped layer of the first side may be more resistant to chemical treatment than the second side of the workpiece. This allows the second side of the workpiece to be textured without capping or otherwise protecting the doped first side, even though the doped layer of the first side physically contacts the chemical treatment. In some embodiments, a p-type dopant is used to create the doped layer. In some embodiments, the workpiece is processed to form a solar cell.
Claims15
A method of processing a workpiece, comprising:
- creating a doped layer in a first side of said workpiece;
- subjecting said workpiece to a chemical treatment to texture said workpiece, wherein a second side, opposite said first side, and said doped layer of said first side physically contact said chemical wherein only said second side becomes textured;
- and
- processing said second side of said workpiece.
A method of processing a workpiece, comprising:
- creating a doped layer in a region of a first side of said workpiece that is less than an entirety of said first side;
- subjecting said workpiece to a chemical treatment to texture said workpiece, wherein said doped layer of said first side physically contacts said chemical and said region does not become textured;
- and
- applying a metallization layer to said region.
A method of creating a solar cell comprising:
- implanting ions of a first dopant in a first side of a workpiece to create a doped layer;
- thermally treating said workpiece after said implant of said first dopant;
- subjecting said workpiece to a chemical treatment, after said thermal treating step, wherein a second side, opposite said first side, and said doped layer of said first side physically contact said chemical wherein only said second side becomes textured;
- and
- implanting ions of a second dopant in said second side.
Dependencies are inferred from the claim text.