Semiconductor element producing method
AssigneePanasonic Corporation
InventorsAkihiko Sagara, Satoshi Shibata
Life of this patent
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Abstract
A semiconductor device is fabricated by performing the steps of: (a) implanting dopant ions into a semiconductor base member, which is made of single-crystal Si, to define at least one of an n-type region and a p-type region in the semiconductor base member; (b) conducting a first heat treatment on the semiconductor base member, in which the n-type or p-type region has been defined, at a temperature rise/fall rate of 40° C./sec or more and with the highest temperature to reach set within the range of 1000° C. to 1200° C.; and (c) conducting a second heat treatment on the semiconductor base member, which has gone through the first heat treatment, at a lower temperature rise/fall rate than in the first heat treatment.
Claims8
A method for fabricating a semiconductor device, the method comprising the steps of:
- (a) implanting dopant ions into a semiconductor base member which is made of single-crystal Si to define at least one of an n-type region and a p-type region in the semiconductor base member;
- (b) conducting a first heat treatment on the semiconductor base member, in which the n-type or p-type region has been defined, at a temperature rise/fall rate of 40° C./sec or more and with the highest temperature to reach set within the range of 1000° C. to 1200° C.;
- and
- (c) conducting a second heat treatment on the semiconductor base member, which has gone through the first heat treatment, at a lower temperature rise/fall rate than in the first heat treatment and at a heat treatment temperature of 700° C. to 750° C.
Dependencies are inferred from the claim text.