Solid state imaging device, method of producing solid state imaging device, and electronic apparatus
AssigneeSony Corporation
InventorRyosuke Nakamura
Life of this patent
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Abstract
A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit.
Claims7
A method of producing a solid state imaging device comprising:
- forming a photoelectric conversion unit in a substrate, wherein the photoelectric conversion unit includes a photodiode;
- forming an overflow path in a semiconductor area that is connected to a charge accumulation area of the photoelectric conversion unit in an area adjacent to an area of the substrate in which the photoelectric conversion unit is formed;
- forming a groove portion at an upper portion of the semiconductor area in which the overflow path is formed, adjacent to the photoelectric conversion unit;
- forming a vertical transmission gate electrode by embedding an electronic material in the groove portion;
- and
- forming a floating diffusion in the semiconductor area wherein the floating diffusion is connected to the overflow path.
A method of producing a solid state imaging device comprising:
- forming a photoelectric conversion unit in a substrate, wherein the photoelectric conversion unit includes a photodiode;
- forming a mask having an opening portion communicating with a selected area adjacent to an area of the substrate in which the photoelectric conversion unit is formed, and performing etching through the mask to form a groove portion with a desired depth;
- forming a conductive semiconductor area that is an overflow path in self alignment by ion injection of second conductive impurities through the mask;
- forming a vertical transmission gate electrode by embedding an electrode material through a gate insulating film in the groove portion;
- and
- forming a floating diffusion area that includes a portion of the conductive semiconductor area, wherein the floating diffusion area is connected to the overflow path.
Dependencies are inferred from the claim text.