Methods for manufacturing chemical sensors with extended sensor surfaces

Abstract

In one implementation, a method for manufacturing a chemical sensor is described. The method includes forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material is formed defining an opening extending to the upper surface of the floating gate conductor. A conductive material is formed within the opening and on an upper surface of the dielectric material. A fill material is formed on the conductive material. The fill material is used as a protect mask to remove the conductive material on the upper surface of the dielectric material. The fill material is then removed to expose remaining conductive material on a sidewall of the opening.

Dependencies are inferred from the claim text.