Method of making diode having reflective layer
AssigneeLG Innotek Co., Ltd.
InventorMyung Cheol Yoo
Life of this patent
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Abstract
A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
Claims18
1-78. (canceled)
A method of making light emitting diodes, comprising:
- providing a substrate having a thickness of less than 120 μm, wherein the substrate has a first side and a second side that is opposite the first side, and wherein the substrate has an inclined surface;
- forming a semiconductor structure on the first side of the substrate, the semiconductor structure including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer, wherein the active layer comprises a multiple quantum well layer, and wherein a clad layer including AlGaN is disposed between the active layer and the second semiconductor layer;
- forming a transparent conductive layer on the semiconductor structure, the transparent conductive layer including ITO (indium-tin-oxide);
- forming a first electrode on the transparent conductive layer;
- and
- forming a second electrode on the first semiconductor layer facing the same direction of the first electrode.
A method of making light emitting diodes, comprising:
- providing a substrate having a thickness of less than 350 μm, wherein the substrate has a first side and a second side that is opposite the first side, and wherein the substrate has an inclined surface;
- forming a semiconductor structure including GaN on the first side of the substrate, wherein the semiconductor structure has an inclined surface;
- and
- forming a transparent conductive layer on the semiconductor structure, the transparent conductive layer including ITO (indium-tin-oxide).
Dependencies are inferred from the claim text.