Method of forming metallic bonding layer and method of manufacturing semiconductor light emitting device therewith

A method of manufacturing a semiconductor light emitting device, comprising:

• preparing a light emitting laminate including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially formed on a temporary substrate;
• forming a first bonding metal layer on the light emitting laminate and forming a second bonding metal layer on a permanent substrate;
• disposing the light emitting laminate on the permanent substrate to allow the first and second bonding metal layers to contact each other;
• and
• forming a eutectic metal bonding layer through a reaction between the first and second bonding metal layers to bond the light emitting laminate to the permanent substrate,
• wherein at least one of the first and second bonding metal layers includes a reaction delaying layer formed of a metal for delaying the reaction between the first and second bonding metal layers.

A method of forming a metal bonding layer, comprising:

• forming a first bonding metal layer and a second bonding metal layer on surfaces of first and second bonding target objects, respectively, the first and second bonding metal layers including first and second reaction delaying layers formed of a metal, respectively;
• and
• forming a first mixture layer including a eutectic metal resulting from a reaction between the first and second bonding metal layers,
• wherein a first residual reaction delaying layer and a second residual reaction delaying layer are positioned in a vicinity of the first mixture layer through a reaction between the first and second bonding metal layers.