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US 2014/0273303 A1Published application
System and Method for an Etch Process with Silicon Concentration Control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Yi Chang, Yih-Song Chiu, Shao-Yen Ku
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Abstract
The present disclosure provides one embodiment of an etch system. The etch system includes a tank designed to hold an etch solution for etching; a silicon monitor configured to measure silicon concentration of the etch solution; a drain module coupled to the tank and being operable to drain the etch solution; and a supply module being operable to fill in the tank with a fresh etch solution.
Claims20
An etch system, comprising:
- a tank designed to hold an etch solution for etching;
- a silicon monitor configured to measure silicon concentration of the etch solution;
- a drain module coupled to the tank and being operable to drain the etch solution;
- and
- a supply module being operable to fill in the tank with a fresh etch solution.
2 more elements
A method, comprising:
- performing an etch process using an etch solution;
- determining a silicon concentration of the etch solution;
- and
- adjusting the silicon concentration of the etch solution to a predefined silicon concentration based on the determined silicon concentration.
1 more element
A method, comprising:
- forming a silicon nitride layer on a semiconductor substrate;
- patterning the silicon nitride layer to form an opening therein;
- etching the semiconductor substrate using the patterned silicon nitride layer as an etch mask, resulting in a trench in the semiconductor substrate;
- filling in the trench with a dielectric material including silicon oxide;
- performing a chemical mechanic polishing to the semiconductor substrate;
- and
- adjusting silicon concentration of an etch solution including phosphorous acid to a predefined silicon concentration;
- and
- removing the patterned silicon nitride layer by the etch solution.
6 more elements
Dependencies are inferred from the claim text.