Fine Temperature Controllable Wafer Heating System

A method of processing wafers in fabricating a semiconductor device, the method comprising:

• providing a first heater adapted to heat a wafer to produce a locally differential target temperature profile thereon;
• placing a wafer having opposing first and second wafer surfaces over the first heater such that the second wafer surface faces the first heater;
• disposing a chemical material over the first wafer surface to form a chemical layer thereon;
• and
• heating the wafer from the second wafer surface by the first heater to produce a target temperature profile on the wafer.

A method of heating wafers in fabricating a semiconductor device, the method comprising:

• disposing a wafer having opposing first and second wafer surfaces over a first heater such that the second wafer surface faces the first heater;
• forming a layer of a chemical material upon the first wafer surface;
• heating the wafer by the first heater while controlling the temperature profile on the wafer so as to achieve an optimum temperature profile thereon;
• and
• heating the layer of the chemical material by a second heater disposed above the chemical layer;
• wherein the wafer is heated up to a temperature above the boiling temperature of the chemical material and the layer of the chemical material is heated up to a temperature below the boiling temperature of the chemical material