Method for Forming ReRAM Chips Operating at Low Operating Temperatures
AssigneeIntermolecular, Inc.
InventorsDipankar Pramanik, Tony P. Chiang
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Abstract
Forming a resistive memory structure at a temperature well above the operating temperature can reduce the forming voltage and create a defect distribution with higher stability and lower programming voltages. The forming temperature can be up to 200 C above the operating temperature. The memory chip can include an embedded heater in the chip package, allowing for a chip forming process after packaging.
Claims20
A method to prepare a memory device, comprising forming a switching element of the memory device at a forming temperature higher than an operating temperature of the memory device.
A method comprising
- forming a memory structure, wherein the memory structure comprises an insulator layer disposed between two electrode layers;
- heating the memory structure;
- applying a first voltage to the two electrode layers to form a switching layer from the insulator layer;
- stopping heating the memory structure.
A method comprising
- forming a memory chip, wherein the memory chip comprises a memory structure, a heater element and a temperature sensor encapsulated in a chip package, wherein the memory structure comprises an insulator layer disposed between two electrode layers;
- applying a first current to the heater element;
- measuring a temperature of the temperature sensor;
- applying a second voltage to the two electrode layers to form a switching layer from the insulator layer after the temperature reaches a setpoint temperature;
- stopping applying first and second voltages or currents.
Dependencies are inferred from the claim text.