Thermally assisted mram with multilayer strap and top contact for low thermal conductivity
AssigneeInternational Business Machines Corporation
InventorAnthony J. Annunziata
Life of this patent
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Abstract
A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). The device includes a magnetic tunnel junction configured to store data, a first multilayer contact structure positioned on one end of the magnetic tunnel junction, and a second multilayer contact structure positioned on an opposite end of the magnetic tunnel junction. The first multilayer contact structure and the second multilayer contact structure each include multiple layers of metals. The multiple layers of metals are structured to inhibit thermal conductivity between the magnetic tunnel junction and surrounding structures, and the multiple layers of metals are structured to electrically conduct electrical current.
Claims12
A method of forming a thermally assisted magnetoresistive random access memory device (TAS-MRAM), the method comprising:
- forming a magnetic tunnel junction configured to store data;
- providing a first multilayer contact structure positioned on one end of the magnetic tunnel junction;
- and
- providing a second multilayer contact structure positioned on an opposite end of the magnetic tunnel junction;
- wherein the first multilayer contact structure and the second multilayer contact structure each include multiple layers of metals, the multiple layers of metals structured to inhibit thermal conductivity between the magnetic tunnel junction and surrounding structures, and the multiple layers of metals structured to electrically conduct electrical current.
A method of forming a thermally assisted magnetoresistive random access memory device (TAS-MRAM), the method comprising:
- providing a first magnetic tunnel junction configured to store data;
- providing a second magnetic tunnel junction configured to store data forming a first multilayer contact structure positioned on one end of the first magnetic tunnel junction;
- forming a second multilayer contact structure positioned on the first magnetic tunnel junction opposite the first multilayer contact structure;
- and
- forming a third multilayer contact structure positioned on one end of the second magnetic tunnel junction, the second multilayer contact structure being positioned on the second magnetic tunnel junction opposite the third multilayer contact structure;
- wherein the first multilayer contact structure includes first multiple layers of metals, the second multilayer contact structure includes second multiple layers of metals, and the third multilayer contact structure include third multiple layers of metals;
- and
- wherein the first, second, and third multiple layers of metals are each structured to inhibit thermal conductivity and electrically conduct electrical current.
A method of forming a thermally assisted magnetoresistive random access memory device (TAS-MRAM), the method comprising:
- providing a first magnetic tunnel junction configured to store data;
- providing a second magnetic tunnel junction configured to store data forming a first multilayer contact structure positioned on one end of the first magnetic tunnel junction;
- providing a non-multilayer contact structure positioned on the first magnetic tunnel junction opposite the first multilayer contact structure;
- and
- forming a second multilayer contact structure positioned on one end of the second magnetic tunnel junction, the non-multilayer contact structure being positioned on the second magnetic tunnel junction opposite the second multilayer contact structure;
- wherein the first multilayer contact structure includes first multiple layers of metals and the second multilayer contact structure includes second multiple layers of metals;
- and
- wherein the first multiple layers of metals and the second multiple layers of metals are each structured to inhibit thermal conductivity and electrically conduct electrical current.
Dependencies are inferred from the claim text.