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US 2014/0273282 A1Published application
Parallel shunt paths in thermally assisted magnetic memory cells
AssigneeInternational Business Machines Corporation
InventorsDavid W. Abraham, John K. De Brosse, Philip L. Trouilloud, Daniel C. Worledge
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Abstract
A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes.
Claims6
A method of fabricating a thermally assisted memory cell, the method comprising:
- patterning a magnetic tunnel junction (MTJ) structure on a substrate;
- depositing a thermally conductive layer over the MTJ structure to form a parallel shunt path;
- and
- coupling an electrical contact to the thermally conductive layer and the MTJ structure.
1 more element
Dependencies are inferred from the claim text.