Middle layer composition for trilayer patterning stack
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Yu Liu, Ching-Yu Chang
Life of this patent
Estimating the term…
Abstract
Methods and materials for making a semiconductor device are described. The method includes forming a middle layer (ML) of a patterning stack (e.g., a tri-layer patterning stack such as a tri-layer resist) and forming a photoresist layer directly on the middle layer. The middle layer includes an additive component having a photo base generator (PBG). The substrate including the photoresist layer and the middle layer is then exposed to a radiation. A covalent bond between the ML and the photoresist layer may be formed.
Claims18
A method of making a semiconductor device, the method comprising:
- forming a middle layer (ML) of a patterning stack on a semiconductor substrate, wherein the middle layer includes an additive component having a photo base generator;
- forming a photoresist layer (PR) of the patterning stack directly on the middle layer;
- and
- exposing the semiconductor substrate to a radiation beam.
A method of making a semiconductor device, the method comprising:
- forming a middle layer comprising a photo base generator over a substrate;
- forming a photoresist layer over the middle layer;
- providing a radiation beam incident the photoresist layer, wherein the radiation beam generates an acid component in the photoresist layer and a base component in the middle layer;
- baking the substrate after providing the radiation beam;
- and
- reacting the base component in the middle layer and the acid component in the photoresist layer to form a covalent bond between the middle layer and the photoresist layer.
A material stack utilized in photolithography patterning, comprising:
- an underlying having an organic polymer;
- a middle layer having a silicon-containing polymer and a photo base generator;
- and
- a photoresist layer on the middle layer, wherein the photoresist layer includes a photosensitive material.
Dependencies are inferred from the claim text.