Back to results
US 2014/0272687 A1Published application
Extreme ultraviolet (euv) multilayer defect compensation and euv masks
AssigneeInternational Business Machines Corporation
InventorsEmily E. GALLAGHER, Gregory R. MCINTYRE, Alfred WAGNER
Life of this patent
Estimating the term…
Abstract
Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.
Claims9
A method, comprising:
- determining an amplitude error correction for a mask based on both a defect in the mask and a phase error correction determined for the defect;
- and
- modifying the mask with the determined phase error correction and the determined amplitude error correction.
Dependencies are inferred from the claim text.