# US 2014/0272686 A1 · Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same

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- Number: US 2014/0272686 A1
- Document ID: US20140272686A1
- Status: Published application
- Kind: A1
- Application number: 14/209,780
- Filed: 2014-03-13
- Published: 2014-09-18
- Earliest claimed: 2013-03-15
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: YEN-CHENG LU; SHINN-SHENG YU; JENG-HORNG CHEN; ANTHONY YEN
- Web page: https://patentgrep.com/patent/US20140272686A1

## CPC

- G03F 1/38: Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F 1/22: Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F 1/24: Reflection masks; Preparation thereof
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate and a patterned absorption layer disposed over the reflective multilayer. The patterned absorption layer has a mask image region and a mask border region. The exemplary mask also includes a mask border frame disposed over the mask border region. The mask border frame has a top surface and a bottom surface. The top surface is not parallel to the bottom surface.

## Claims

### Claim 1

A mask comprising:
a substrate;
a reflective multilayer coating disposed over the substrate;
a patterned absorption layer disposed over the reflective multilayer, wherein the patterned absorption layer has a mask image region and a mask border region; and
a mask border frame disposed over the mask border region, wherein the mask border frame has a top surface and a bottom surface, wherein the top surface is not parallel to the bottom surface.

### Claim 2 (depends on 1)

The mask of claim 1, wherein the top surface of the mask border frame is tilted an angle to the bottom surface.

### Claim 3 (depends on 2)

The mask of claim 2, wherein the angle is in a range from about 10 degree to about 30 degree.

### Claim 4 (depends on 3)

The mask of claim 3, wherein the tilt mask border frame is disposed over the patterned mask that its thicker side locates adjacent to the mask image region of the patterned mask.

### Claim 5 (depends on 1)

The mask of claim 1, wherein the top surface of the mask border frame formed by a multiple of facets.

### Claim 6 (depends on 5)

The mask of claim 5, wherein the top surface of the mask border frame formed by a first facet and a second facet in a repeatable manner.

### Claim 7 (depends on 6)

The mask of claim 6, wherein a fix angle is between the first facet and second facet, wherein the fix angle is in a range from 30 to 150 degree.

### Claim 8 (depends on 1)

The mask of claim 1, further comprising:
a buffer layer disposed between the reflective multilayer coating and the Ag2O absorption layer; and
a capping layer disposed between the reflective multilayer coating and the buffer layer.

### Claim 9 (depends on 1)

The mask of claim 1, further comprising a conductive layer disposed over the substrate, wherein the reflective multilayer coating is disposed over a first surface of the substrate and the conductive layer is disposed over a second surface of the substrate, the second surface being opposite the first surface.

### Claim 10 (depends on 1)

The mask of claim 1, wherein the mask border frame includes silicon.

### Claim 11

A mask comprising:
a substrate having two regions, a mask border region and a mask image region;
the mask image region including a first reflective surface disposed over the substrate, the first reflective surface being substantially in a first plane; and
the mask border region including a second reflective surface disposed over the substrate, the second reflective surface being substantially non-parallel with the first plane

### Claim 12 (depends on 11)

The mask of claim 11, wherein the second reflective surface is multi-faceted.

### Claim 13 (depends on 11)

The mask of claim 11, wherein the first reflective surface includes a reflective multilayer coating disposed over the substrate, the mask further comprising:
a patterned absorption layer disposed over the reflective multilayer.

### Claim 14 (depends on 13)

The mask of claim 13 being an extreme ultraviolet (EUV) phase shift mask.

### Claim 15

A method comprising:
providing a patterned mask having a mask image region and a mask border region;
providing a mask border frame having a first surface and a second surface, wherein the first surface is substantially not parallel to the second surface; and
mounting the second surface of the mask border frame to the mask border region of the patterned mask.

### Claim 16 (depends on 15)

The method of claim 15, wherein the first surface of the mask border frame is tilted to the second surface.

### Claim 17 (depends on 16)

The method of claim 16, wherein the tilt mask border frame is mounted over the mask image region that its thicker side is located adjacent to the mask image region.

### Claim 18 (depends on 15)

The method of claim 15, wherein the first surface of the mask border frame is formed to have a first facet and a second facet, in a repeatable manner, while the second surface is a flat surface.

### Claim 19 (depends on 18)

The method of claim 18, wherein the flat second surface of the mask border frame is mounted over the mask image region of the patterned mask.

### Claim 20 (depends on 11)

The method of claim 11, wherein the mask border frame is mounted over the mask image region by interposing a pressure-sensitive adhesive agent between the mask border frame and the patterned mask and then applying an adequate pressure to adhere the mask border frame to the patterned mask.
