Dense composite material, method for producing the same, and component for semiconductor production equipment
AssigneeNGK Insulators, Ltd.
InventorsAsumi JINDO, Katsuhiro INOUE, Yuji KATSUDA
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Abstract
A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.
Claims15
A dense composite material comprising:
- 37% to 60% by mass of silicon carbide grains;
- and
- titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains,
- wherein the dense composite material has an open porosity of 1% or less.
A method for producing a dense composite material comprising:
- (a) a step of forming a powder mixture containing 39% to 51% by mass of silicon carbide particles having an average particle size of 10 to 25 μm and at least one starting material selected so that Ti and Si are contained, in which, regarding Si originating from starting materials other than silicon carbide and Ti, the mass ratio Si/(Si+Ti) is 0.26 to 0.54;
- and
- (b) a step of sintering the powder mixture by hot pressing, in an inert atmosphere, at 1,370° C. to 1,460° C.
Dependencies are inferred from the claim text.