Systems and methods for remote plasma atomic layer deposition

A substrate processing system for depositing a film on a substrate, comprising:

• a processing chamber including a reaction volume;
• a substrate arranged on a pedestal in the reaction volume;
• a plasma dome;
• a dual plenum showerhead arranged between the plasma dome and the reaction volume, wherein a first plenum is defined by the dual plenum showerhead and a second plenum is defined between the plasma dome and the dual plenum showerhead;
• a remote plasma source configured to supply plasma gas in the second plenum;
• a precursor source supplying a precursor gas to the first plenum, wherein the precursor gas flows from the first plenum through first distribution holes in the dual plenum showerhead to the reaction volume and wherein the plasma gas flows from the second plenum through second distribution holes in the dual plenum showerhead to the reaction volume;
• and
• a controller configured to:
• introduce the precursor gas into the reaction volume;
• after a predetermined period, purge the precursor gas from the reaction volume;
• and
• expose the substrate to the plasma gas.