Methods for maintaining clean etch rate and reducing particulate contamination with pecvd of amorphous silicon filims
AssigneeApplied Materials, Inc.
InventorsSubbalakshmi SREEKALA, Xinhai HAN, Nagarajan RAJAGOPALAN, Bok Hoen KIM, Yoichi SUZUKI, Tsutomu KIYOHARA
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Abstract
Methods for maintaining clean etch rate and reducing particulate contamination with PECVD of amorphous silicon films are provided. The method comprises cleaning a processing chamber with a plasma comprising a cleaning gas, exposing at least a portion of the interior surfaces and components of the processing chamber to an oxidation gas and a nitration gas in the presence of a plasma and depositing a bi-layer seasoning layer on the interior surfaces and components of the processing chamber.
Claims20
A method for reducing sorbable contaminants in a substrate processing chamber prior to substrate processing, comprising:
- cleaning a processing chamber with a plasma comprising a cleaning gas;
- exposing at least a portion of the interior surfaces of the processing chamber to an oxidation gas and a nitration gas in the presence of a plasma;
- and
- depositing a bi-layer seasoning layer on the interior surfaces of the processing chamber.
A method for reducing sorbable contaminants in a processing chamber, comprising:
- cleaning a processing chamber having a substrate support and a showerhead disposed therein with a plasma comprising an NF3 cleaning gas, wherein the plasma is formed by a remote plasma source;
- exposing at least a portion of the interior surfaces of the processing chamber to an oxidation gas and a nitration gas in the presence of a plasma;
- and
- depositing a bi-layer seasoning layer on the interior surfaces of the processing chamber, wherein the bi-layer seasoning layer comprises:
- a silicon oxide layer formed on the interior surfaces of the processing chamber;
- and
- a silicon oxynitride layer formed on the silicon oxide layer.
Dependencies are inferred from the claim text.