Apparatus and method for ion implantation in a magnetic field
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsAlexander C. Kontos, Frank Sinclair, Rajesh Dorai
Life of this patent
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Abstract
In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap.
Claims21
A system for treating a substrate having a magnetic layer, comprising:
- an ion generating apparatus for directing an ion beam to the substrate;
- and
- a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate,
- the magnetic alignment apparatus and ion generating apparatus generating a process region in which the ion beam and magnetic field overlap.
(canceled)
A method for treating a substrate having a magnetic layer, comprising:
- arranging a substrate that includes the magnetic layer;
- generating over a first area of the substrate a magnetic field in a magnetic field direction out of plane relative to a plane of the substrate;
- and
- directing an ion beam over a second area of the substrate,
- wherein the first area and second area overlap at the substrate to define a process region.
Dependencies are inferred from the claim text.