Multi-platen ion implanter and method for implanting multiple substrates simultaneously
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Hua WANG, Ming-Te Chen, Sheng-Wei Lee
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Hua WANG, Ming-Te Chen, Sheng-Wei Lee
Estimating the term…
An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation.
A method for implanting ions into a plurality of substrates, said method comprising:
A method for implanting ions into a plurality of substrates, said method comprising:
An ion implantation apparatus comprising:
Dependencies are inferred from the claim text.