Light irradiation type heat treatment apparatus and heat treatment method
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorKenichi YOKOUCHI
Life of this patent
Estimating the term…
Loading patent…
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorKenichi YOKOUCHI
Estimating the term…
Four wafer pins are fixed in a chamber and spaced at intervals of 90 degrees. Four support pins are provided in a wafer pocket of a susceptor and spaced at intervals of 90 degrees. The four wafer pins and the four support pins are disposed concyclically in an alternating manner at intervals of 45 degrees. When halogen lamps irradiate a semiconductor wafer with light to heat the semiconductor wafer, the susceptor is moved upwardly and downwardly, so that the semiconductor wafer is shifted between the wafer pins and the support pins. This eliminates the occurrence of a problem such that the quartz pins which are relatively low in temperature are continuously kept in contact with particular places of the semiconductor wafer to improve the uniformity of the in-plane temperature distribution of the semiconductor wafer.
A heat treatment apparatus for heating a substrate by irradiating the substrate with light, comprising:
A method of heating a substrate by irradiating the substrate with light, comprising the step of
Dependencies are inferred from the claim text.