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US 2014/0268982 A1Published application
Racetrack memory with electric-field assisted domain wall injection for low-power write operation
AssigneeInternational Business Machines Corporation
InventorsAnthony J. Annunziata, Marcin J. Gajek
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Abstract
Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.
Claims7
A magnetic domain wall shift register memory comprising:
- a magnetic nanowire;
- a dielectric layer configured to provide a surface anisotropy contribution to the nanowire;
- at least one antiferromagnet configured to induce an exchange bias locally on the nanowire;
- and
- a tunnel junction configured to provide a readout of a magnetic domain.
2 more elements
Dependencies are inferred from the claim text.