Memory system performing address mapping according to bad page map
AssigneeSamsung Electronics Co., Ltd.
InventorsDAWOON JUNG, JUNGHO YUN, MIN-CHUL KIM, YOUNGIL SEO, WONCHUL LEE
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Abstract
A memory system comprises a nonvolatile memory comprising a memory block having multiple pages, and a controller configured to control the nonvolatile memory to store data in the memory block according to a command and logical address received from an external source. The controller is configured to determine whether the logical address is currently mapped to a bad page of the memory block by referring to a bad page map, and as a consequence of determining that the logical address corresponds to the bad page, remaps the logical address to a different page and stores dummy data in the bad page.
Claims20
A memory system, comprising:
- a nonvolatile memory comprising a memory block having multiple pages;
- and
- a controller configured to control the nonvolatile memory to store data in the memory block according to a command and logical address received from an external source;
- wherein the controller is configured to determine whether the logical address is currently mapped to a bad page of the memory block by referring to a bad page map, and as a consequence of determining that the logical address corresponds to the bad page, remaps the logical address to a different page and stores dummy data in the bad page.
A memory system, comprising:
- a nonvolatile memory comprising a memory block having multiple pages;
- and
- a controller configured to control the nonvolatile memory to store data in the memory block according to a command and logical address received from an external source;
- wherein the controller is configured to determine whether the logical address is currently mapped to a bad page of the memory block by referring to a bad page map, and as a consequence of determining that the logical address corresponds to the bad page, remaps the logical address to a different page and stores dummy data in the bad page;
- wherein the controller is further configured to determine whether a number of times that an erase operation has been performed on the memory block has reached a predetermined reference value, and as a consequence of determining that the number of times that an erase operation has been performed on the memory block has reached the predetermined reference value, update the bad page map based on a bad page list comprising information indicating whether each of multiple different pages is a bad page according to different numbers of erase values.
A method of operating a memory system comprising a nonvolatile memory, comprising:
- controlling the nonvolatile memory to store data in the memory block according to a command and logical address received from an external source;
- determining whether the logical address is currently mapped to a bad page of the memory block by referring to a bad page map;
- and
- as a consequence of determining that the logical address corresponds to the bad page, remapping the logical address to a different page and stores dummy data in the bad page.
The method of claim 17, further comprising:
- determining whether a number of times that an erase operation has been performed on the memory block has reached a predetermined reference value;
- and
- as a consequence of determining that the number of times that an erase operation has been performed on the memory block has reached the predetermined reference value, updating the bad page map based on a bad page list comprising information indicating whether each of multiple different pages is a bad page according to different numbers of erase values.
Dependencies are inferred from the claim text.