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US 2014/0235513 A1Published application
Coating including inorganic fullerene-like particles and inorganic tubular-like particles
AssigneeNanotech Industrial Solutions, Inc.
InventorsEugene Kverel, Ronen Kreizman, George Diloyan, Alon Shapira
Life of this patent
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Abstract
In one embodiment, a coating is provided that includes a deposition surface, and a coating on the deposition surface. The coating may include particles of a metal chalcogenide comprising a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometries and tubular-like geometries. The metal chalcogenide composition has a molecular formula of MX2.
Claims20
A coating comprising:
- a deposition surface;
- and
- a coating on the deposition surface, the coating including particles of a metal chalcogenide comprising a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometries and tubular-like geometries, wherein the metal chalcogenide composition has a molecular formula of MX2, where M is a metallic element selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg) and combinations thereof, and X is a chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), oxygen (O) and combinations thereof.
A deposition method comprising:
- providing a deposition surface;
- and
- depositing by a physical vapor deposition (PVD) method a coating on the deposition surface, the coating including particles of a metal chalcogenide comprising at least one of a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometries and tubular-like geometries, wherein the metal chalcogenide composition has a molecular formula of MX2 and M is a metallic element selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg) and combinations thereof, and X is a chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), oxygen (O) and combinations thereof.
A coating method comprising:
- providing a deposition surface;
- and
- depositing by an electroplating method a coating on the deposition surface, the coating includes particles of a metal chalcogenide comprising a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometry particles and tubular-like geometry particles, wherein the metal chalcogenide composition has a molecular formula of MX2 and M is a metallic element selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg) and combinations thereof, and X is a chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), oxygen (O) and combinations thereof.
A coating method comprising:
- providing a deposition surface;
- and
- depositing by solvent transport medium a coating on the deposition surface includes particles of a metal chalcogenide comprising a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometries and tubular-like geometries particles, wherein the metal chalcogenide composition has a molecular formula of MX2 and M is a metallic element selected from the group consisting of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg) and combinations thereof, and X is a chalcogen element selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), oxygen (O) and combinations thereof.
Dependencies are inferred from the claim text.