Method of manufacturing semiconductor device, apparatus for manufacturing semiconductor device, and non-transitory computer-readable recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsHiroshi ASHIHARA, Tomihiro AMANO, Shin HIYAMA, Harunobu SAKUMA, Yuichi WADA, Hideto TATENO
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Abstract
Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.
Claims17
A method of manufacturing a semiconductor device, comprising:
- (a) loading a substrate having a silicon-containing film formed thereon into a process chamber;
- (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure;
- and
- (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.
An apparatus for manufacturing a semiconductor device, comprising:
- a process chamber configured to accommodate a substrate having a silicon-containing film formed thereon;
- a gas supply unit configured to supply a gas into the process chamber;
- a process liquid supply unit configured to supply a process liquid to the substrate;
- and
- a control unit configured to control the gas supply unit and the process liquid supply unit to supply the gas into the process chamber until an inner pressure of the process chamber is equal to or greater than atmospheric pressure while simultaneously supplying the process liquid to the substrate.
A non-transitory computer readable recording medium storing a program executable by a computer, the program comprising:
- (a) supplying a gas into a process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure;
- and
- (b) supplying a process liquid from a process liquid supply unit to a substrate accommodated in the process chamber and having a silicon-containing film formed thereon.
Dependencies are inferred from the claim text.