Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

A method of processing a substrate, the method comprising forming a thin film having a predetermined composition and containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle comprising:

• forming a first layer containing the predetermined element, nitrogen and carbon on the substrate by alternately performing a predetermined number of times:
• supplying a first source gas containing the predetermined element and a halogen group to the substrate in a process chamber;
• and supplying a second source gas containing the predetermined element and an amino group to the substrate in the process chamber;
• forming a second layer by modifying the first layer by supplying an amine-based source gas to the substrate in the process chamber;
• and
• forming a third layer by modifying the second layer by supplying a reactive gas different from the first source gas, the second source gas and the amine-based source gas to the substrate in the process chamber.

A substrate processing apparatus comprising:

• a process chamber configured to accommodate a substrate;
• a first source gas supply system configured to supply a first source gas containing a predetermined element and a halogen group to the substrate in the process chamber;
• a second source gas supply system configured to supply a second source gas containing the predetermined element and an amino group to the substrate in the process chamber;
• a third source gas supply system configured to supply an amine-based source gas to the substrate in the process chamber;
• a reactive gas supply system configured to supply a reactive gas different from the first source gas, the second source gas and the amine-based source gas to the substrate in the process chamber;
• and
• a controller configured to control the first source gas supply system, the second source gas supply system, the third source gas supply system and the reactive gas supply system to form a thin film having a predetermined composition and containing the predetermined element on the substrate by performing a cycle a predetermined number of times, the cycle comprising:
• forming a first layer containing the predetermined element, nitrogen and carbon on the substrate by alternately performing a predetermined number of times:
• supplying the first source gas to the substrate in the process chamber;
• and supplying the second source gas to the substrate in the process chamber;
• forming a second layer by modifying the first layer by supplying the amine-based source gas to the substrate in the process chamber;
• and forming a third layer by modifying the second layer by supplying the reactive gas to the substrate in the process chamber.

A non-transitory computer-readable recording medium storing a program that causes a computer to perform:

• forming a thin film having a predetermined composition and containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
• forming a first layer containing the predetermined element, nitrogen and carbon on the substrate by alternately performing a predetermined number of times:
• supplying a first source gas containing the predetermined element and a halogen group to the substrate in a process chamber;
• and supplying a second source gas containing the predetermined element and an amino group to the substrate in the process chamber;
• forming a second layer by modifying the first layer by supplying an amine-based source gas to the substrate in the process chamber;
• and
• forming a third layer by modifying the second layer by supplying a reactive gas different from the first source gas, the second source gas and the amine-based source gas to the substrate in the process chamber.