Etchant composition and etching method
AssigneeHayashi Pure Chemical Ind, Ltd.
InventorsAtsushi Matsui, Mayumi Kimura, Tsuguhiro Tago
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Abstract
This invention is concerning an etchant composition used to etch a silicon-containing film formed on a target substrate. The etchant composition includes at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride and an organic acid.
Claims12
An etchant composition used to etch a silicon-containing film formed on a target substrate comprising:
- at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride, and an organic acid.
An etching method used to etch a silicon-containing film formed on a target substrate, the etching method comprising:
- etching with an etchant composition including at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride and an organic acid.
Dependencies are inferred from the claim text.