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US 2014/0235058 A1Published application
Method for Forming a Power Semiconductor Device
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Hans-Joachim Schulze, Franz Hirler, Wolfgang Lehnert, Rudolf Berger, Klemens Pruegl, Helmut Strack
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Abstract
A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor.
Claims10
A method for forming a semiconductor device, the method comprising:
- providing a semiconductor body which comprises a main surface and a first n-type semiconductor region;
- forming a trench which extends from the main surface into the first n-type semiconductor region;
- and
- forming a dielectric layer comprising fixed negative charges on a surface of the trench, comprising performing at least one atomic layer deposition using an organometallic precursor.
1 more element
Dependencies are inferred from the claim text.