Pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Tsutomu Ogihara
Life of this patent
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Abstract
A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution of a resin having a carbon content of at least 75 wt % in the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.
Claims8
A pattern forming process comprising the steps of:
- coating a chemically amplified resist composition onto a processable substrate, said resist composition comprising a resin comprising recurring units having an acid labile group which is eliminatable with acid so that it may turn insoluble in organic solvent as a result of the acid labile group being eliminated, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, prebaking the coating to remove the unnecessary solvent and to form a resist film, exposing patternwise the resist film to high-energy radiation, post-exposure baking, and developing in an organic solvent developer to form a negative pattern,
- heating the negative pattern to render it resistant to a second organic solvent,
- coating a solution comprising a resin having a carbon content of at least 75% by weight and the second organic solvent onto the negative pattern-bearing substrate, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.
Dependencies are inferred from the claim text.