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US 2014/0235053 A1Published application
Methods of Forming Through Silicon Via Openings
AssigneeTSMC Solid State Lighting Ltd.
InventorsChyi Shyuan Chern, Hsin-Hsien Wu, Chun-Lin Chang, Hsing-Kuo Hsia, Hung-Yi Kuo
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Abstract
A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.
Claims20
A method, comprising:
- forming an opening in a substrate, the opening completely extending through the substrate, wherein a recast material is formed on sidewalls of the substrate exposed by the opening;
- applying a first chemical in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical;
- and
- applying a second chemical in the opening to remove the residue of the first chemical, the second chemical being different from the first chemical.
1 more element
A method, comprising:
- providing a substrate having a first side and a second side opposite the first side;
- performing a laser ablating process to form an opening that extends from the first side of the substrate to the second side of the substrate, wherein the laser ablation process melts portions of the substrate, thereby leaving a recast material in the opening;
- removing the recast material with a first chemical, wherein the removing of the recast material leaves a residue of the first chemical in the opening;
- and
- removing the residue of the first chemical with a second chemical different from the first chemical.
2 more elements
A method, comprising:
- forming a through-silicon-via (TSV) opening in a silicon substrate through a laser process that melts the silicon of the silicon substrate, wherein the melted silicon adheres to a sidewall of the TSV opening after being cooled, thereby giving the TSV opening at least one of:
- an hourglass shape and roughened sidewall surfaces;
- removing the melted silicon using a halogen-containing first chemical, wherein the halogen-containing first chemical leaves a residue in the TSV opening;
- removing the residue of the halogen-containing first chemical with a second chemical, the second chemical containing:
- a first component that is substantially inactive with the silicon substrate;
- and
- a second component that is substantially active with halogen;
- and
- thereafter forming a conductive material in the TSV opening.
6 more elements
Dependencies are inferred from the claim text.