Semiconductor Devices and Methods of Manufacture Thereof

A method of manufacturing a semiconductor device, the method comprising:

• forming a first insulating material over a workpiece;
• forming a conductive feature in the first insulating material;
• forming a second insulating material over the conductive feature and the first insulating material;
• patterning the second insulating material to expose a portion of a top surface of the conductive feature;
• simultaneously forming a graphene-based conductive layer over the exposed top surface of the conductive feature and a carbon-based adhesive layer on sidewalls of the patterned second insulating material;
• and
• forming a plurality of carbon nano-tubes (CNT's) in the patterned second insulating material over the graphene-based conductive layer and the carbon-based adhesive layer.

A method of manufacturing a semiconductor device, the method comprising:

• forming a patterned conductive feature in a first insulating material;
• forming a second insulating material over the first insulating material and the patterned conductive feature;
• patterning the second insulating material to form a second opening having sidewalls therein, the second opening exposing a portion of the patterned conductive feature;
• simultaneously depositing a graphene-based conductive layer on exposed portion of the conductive feature and a carbon-based conductive layer on the sidewalls of the second opening;
• depositing a catalyst on the graphene-based conductive layer;
• and
• growing within the second opening a carbon nano-tube.