Methods of forming gates of semiconductor devices

A method of forming a gate of a semiconductor device, the method comprising:

• forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type;
• forming a high-k layer in the first and second recesses;
• providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess;
• removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal;
• after removing at least portions of the first metal from the second recess, providing a second metal within the second recess;
• and
• providing a third metal on the second metal within the second recess while the first metal remains in the first recess,
• wherein the first and third metals comprise a same metal.

A method of forming a gate of a semiconductor device, the method comprising:

• forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type;
• forming a high-k layer in the first and second recesses;
• providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess;
• removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal, wherein removing at least portions of the first metal from the second recess comprises:
• providing a mask layer on the first metal in the first and second substrate regions;
• removing the mask layer from the second substrate region using a photolithography process to expose the first metal in the second recess;
• and
• removing the exposed first metal from the second recess;
• and
• after removing at least portions of the first metal from the second recess, providing a second metal within the second recess.