Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorMasatoshi Fukuda
Life of this patent
Estimating the term…
Abstract
A hard mask formed above a gate film is patterned with a first mask pattern, the patterned hard mask film is processed into a gate pattern with a second mask pattern, the gate film is patterned with the hard mask film as a mask, a spacer insulating film is formed, a third mask pattern covering an edges of the gate pattern is formed above the spacer insulating film, the spacer insulating film is etched with the third mask pattern as a mask, and a sidewall insulating film is formed on side walls of the gate film leaving the spacer insulating film in a region of the edge of the gate pattern.
Claims9
A method of manufacturing a semiconductor device comprising:
- forming a gate insulating film above a semiconductor substrate;
- forming a gate film above the gate insulating film;
- forming a hard mask film above the gate insulating film;
- patterning the hard mask with a first mask pattern;
- processing the patterned hard mask film into a gate pattern with a second mask pattern;
- patterning the gate film and the gate insulating film with the hard mask film having the gate pattern as a mask;
- forming a spacer insulating film above the semiconductor substrate with the patterned gate film and the gate insulating film;
- forming above the spacer insulating film a third mask pattern covering an edge of the patterned gate film and the gate insulating film;
- and
- etching the spacer insulating film with the third mask patterns as the mask to form a sidewall insulating film of the spacer insulating film on side walls of the patterned gate film and the gate insulating film, leaving the spacer insulating film below the third mask pattern.
Dependencies are inferred from the claim text.