Multi-composition dielectric for semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSu-Hao Liu, Chun-Yi Chang, Ming-Feng Lin, Sheng-Wen Yu, Ziwei Fang
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a method of semiconductor device fabrication including forming a multi-composition ILD layer by forming a first portion of an inter-layer dielectric (ILD) layer on a semiconductor substrate; and forming a second portion of an ILD layer on the first portion of the ILD layer. The second portion may have a greater silicon content than the first portion. For example, the second portion may be a silicon rich oxide.
Claims20
A method of semiconductor device fabrication, comprising:
- forming a first portion of an inter-layer dielectric (ILD) layer on a semiconductor substrate;
- and
- forming a second portion of the ILD layer on the first portion of the ILD layer, wherein the second portion has a greater silicon content than the first portion.
A method of semiconductor device fabrication, comprising:
- forming a dummy gate structure on a substrate;
- forming a dielectric layer around and on the dummy gate structure, wherein the forming the dielectric layer includes:
- forming a first layer, wherein the first layer includes silicon oxide;
- and
- forming a second layer on the first layer, wherein the second layer is a silicon-rich oxide material.
A method of semiconductor device fabrication, comprising:
- forming a dummy gate structure on a substrate;
- forming a multi-region dielectric layer around and on the dummy gate structure, wherein the forming the multi-region dielectric layer includes:
- forming a first dielectric layer;
- and
- forming a second dielectric layer on the first layer, wherein the second layer includes at least one of a silicon-rich oxide, SiCNO, SiN, and combinations thereof.
Dependencies are inferred from the claim text.