Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsClement Hsingjen Wann, Chih-Hsin Ko, Cheng-Hsien Wu
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Abstract
A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.
Claims20
A method comprising:
- forming an insulation layer extending into a substrate, with portions of the substrate in, and separate from each other by, portions of the insulation layer;
- removing the portions of the substrate to form recesses in the insulation layer;
- epitaxially growing a semiconductor material in the recesses;
- performing a planarization to remove excess portions of the semiconductor material, with remaining portions of the semiconductor material in the recesses;
- etching the remaining portions to form V-grooves;
- and
- epitaxially growing a III-V compound semiconductor film starting from the V-grooves.
A method comprising:
- forming an insulation layer extending into a semiconductor substrate, with portions of the semiconductor substrate in, and separate from each other by, portions of the insulation layer, and wherein the portions of the substrate semiconductor form a repeated pattern;
- removing the portions of the substrate to form recesses in the insulation layer;
- epitaxially growing a first III-V compound semiconductor in the recesses;
- performing a planarization to remove excess portions of the first III-V compound semiconductor, with remaining portions of the first III-V compound semiconductor in the recesses and lower than a top surface of the insulation layer;
- etching the remaining portions to form V-grooves;
- and
- epitaxially growing a second III-V compound semiconductor starting from the V-grooves.
A method comprising:
- forming an insulation layer in a substrate, with portions of the substrate in, and separate from each other by, the insulation layer;
- removing the portions of the substrate to form recesses in the insulation layer;
- epitaxially growing a semiconductor material in the recesses to form semiconductor re-growth regions, wherein top ends of the semiconductor re-growth regions form pyramids;
- and
- epitaxially growing a III-V compound semiconductor film starting from the pyramids.
Dependencies are inferred from the claim text.