Method for producing a protective structure

A method for producing a protective structure, the method comprising:

• providing a semiconductor base substrate with a doping of a first conductivity type;
• producing a first epitaxial layer on the semiconductor base substrate;
• implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer;
• applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer;
• forming at least one insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into a first region and into a second region;
• producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region;
• producing a second dopant zone with a doping of the second conductivity type in the second region;
• and
• outdiffusing the dopant from the implantation region in order to form a buried layer at the junction between the first epitaxial layer and the first region of the second epitaxial layer.