Semiconductor device and method of forming epitaxial layer
AssigneeUnited Microelectronics Corp.
InventorsChin-I Liao, Teng-Chun Hsuan, Chin-Cheng Chien
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Abstract
A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor substrate. Preferably, the semiconductor substrate includes at least a recess, the undoped first epitaxial layer has a lattice constant, a bottom thickness, and a side thickness, in which the lattice constant is different from a lattice constant of the semiconductor substrate and the bottom thickness is substantially larger than or equal to the side thickness.
Claims9
A method for forming epitaxial layer, comprising:
- providing a semiconductor substrate, wherein the semiconductor substrate comprises at least a recess;
- and
- forming an undoped first epitaxial layer in the semiconductor substrate, wherein the undoped first epitaxial layer has a lattice constant, a bottom thickness, and a side thickness, wherein the lattice constant is different from a lattice constant of the semiconductor substrate and the bottom thickness is substantially larger than or equal to the side thickness.
Dependencies are inferred from the claim text.